ConsortiumThe STEEPER consortium grouped some of the leading European research institutes and universities in the fields of nanoelectronics technology, its fabrication and its theory modelling and simulation in the beyond CMOS framework. It included also three big companies covering industrial validation for a range of end-user applications especially in the domains of small power (or greener) electronics and of high performance electronics, and committed to the investigation, development and ultimately, the exploitation of emerging Beyond CMOS technology.
The STEEPER project assembled partners with complementary expertise and shared access to infrastructures not available on a national level. The STEEPER consortium was a multinational team, involving leading scientists and engineers with a strong background in electronics, physics, material science and modelling.
About EPFLEPFL (Ecole Polytechnique Fédérale de Lausanne or the Swiss Federal Institute of Technology of Lausanne) is one of the two national engineering schools in Switzerland. It delivers Masters and Ph.D. degrees in 12 engineering fields. The school has a staff of about 2,400 people including professors, scientists and administrative personnel and an annual budget of around 500 MCHF. There are more than 6,000 engineering students, while Ph.D. students count for more than 900.
The Laboratory of Micro and Nano-Electronic Devices (Nanolab), represented by Professor Mihai Adrian Ionescu is working on subjects in the field of silicon micro/nano-electronics with special emphasis on (i) low- and high-voltage CMOS microelectronic devices and circuits (design, modeling and simulation), (ii) few-electron devices and ultimate memory architectures, (iii) SOI devices and circuits and their applications, (iv) RF MEMS and ICs, and (v) power management. The lab has access to state-of-the-art MEMS/NEMS fabrication facilities at the Center of Micro-Nano-technologies of EPFL and has its own electrical characterization platforms (DC to 40GHz, and 4k to 400k) including professional probe stations and test equipment.
Partner 1 - EPFL (Coordinator)
Ecole Polytechnique Fédérale de Lausanne, Laboratory of Micro and Nano-Electronic Devices (Nanolab)
Adrian Mihai Ionescu (Coordinator), Wladek Grabinski
About CEA LETILETI, part of the CEA (French Atomic Energy Agency) is a research institute (on materials, processes and technologies) whose mission is to develop innovative solutions which lead to industrial transfers or start-up creation, and meanwhile to explore prospective fields in collaboration with academia. LETI’s activities cover Si technology, microsystem technology, optical components, multimedia, transmission and telecommunication systems, design, and microtechnologies for health and biology. The driving programs of LETI are linked with Minatec (the innovation center in micro- and nano- technologies) and with Nanotec 300 (the 300mm infrastructure to take up the challenge of micro- and nano-electronics).
CEA has a strong experience in microelectronics, and especially in advanced CMOS. Its activities cover the study of innovative substrates and devices for sub 22nm nodes. It has fabricated aggressive lengths MOS transistors on ultrathin SOI (Si thickness down to 2.5nm), strained-Silicon on Insulator (sSOI), SiGe-On-Insulator (SGOI) and GeOI substrates. CEA is focused on alternative solutions for CMOS down scaling (high-k dielectrics, metal gates, Raised Source/Drain, Metallic S/D…) and also on innovative CMOS integration schemes like Double-Gate transistors, Multigate transistors, 3D stacked nanowires transistors, 3D integration of Ge on Si CMOS. Besides these MOSFET based studies, new kinds of transistors using Impact ionization (I-MOS) or tunnelling effects (Tunnel FETs) are also studied and fabricated in CEA since 2005.
Partner 2 - CEA
Commissariat à l’Energie Atomique - Laboratoire d’Electronique et de Technologie de l’Information (CEA)
Cyrille Le Royer, Carlo Reita, Olivier Faynot
About IUNETIUNET gathers Italian university research groups with sound and complementary experience in the theory, modeling, model implementation, simulation and characterization of nanometer-size electron devices. At the core of the competence is a decennial experience in drift-diffusion, semiclassical and quantum transport theory and modeling, covering deterministic and statistical solution techniques.
IUNET brings in the project its expertise in the modelling of transport in nanoscale FETs using the semiclassical multi-subband Monte Carlo approach to solve the transport equations, and full quantum-mechanical approaches based on the NEGF formalism and atomistic tight binding calculations. IUNET is also responsible for mixed device/circuit simulations to benchmark Tunnel-FETs against CMOS devices and for the investigation of energy filtering concepts to achieve aggressive voltage scaling limits.
Partner 3 - IUNET
Consorzio Nazionale Interuniversitario per la Nanoelettronica
Luca Selmi, Giorgio Baccarani
About GLOBALFOUNDRIESGLOBALFOUNDRIES is the world’s first full-service semiconductor foundry with a truly global footprint. Launched in March 2009, the company has quickly achieved scale as one of the largest foundries in the world, providing a unique combination of advanced technology and manufacturing to more than 150 customers and employing more than 13,000 employees. With operations in Singapore, Germany and the United States, GLOBALFOUNDRIES is the only foundry that offers the flexibility and security of manufacturing centers spanning three continents. The company’s three 300mm fabs and five 200mm fabs provide the full range of process technologies from mainstream to the leading edge. This global manufacturing footprint is supported by major facilities for research, development and design enablement located near hubs of semiconductor activity in the United States, Europe and Asia. GLOBALFOUNDRIES is owned by the Advanced Technology Investment Company (ATIC).
GLOBALFOUNDRIES Fab 1 in Dresden, Germany, employs more than 3,300 highly trained engineers and specialists. Fab 1 is one of the most advanced 300mm wafer fabs in the world and serves GLOBALFOUNDRIES’ customers with leading-edge integrated circuits in 45nm-, 40nm-, 32nm and 28nm technologies. Fab 1 is currently undergoing a significant capacity ramp up to 80,000 wafer starts per month. Already today, the site is the largest state-of-the-art wafer fab in Europe with a total cleanroom floor space of about 52,000 m² and an overall investment of more than US$ 8 billion. In 2012, the company plans to further invest significantly. With its expertise in semiconductor manufacturing and continuous commitment to research and development, GLOBALFOUNDRIES has helped to establish Saxony as the leading micro- and nanoelectronic cluster in Europe. At present, more than 44,000 people in 1,200 high-tech companies are employed in the greater region. http://www.globalfoundries.com.
Partner 4 - GF
Global Foundries Dresden Module One LLC & Co. KG
About IBMIBM has built up a strong background in epitaxy of silicon nanowire materials and in controlled doping of such structures, which is evidenced through several high impact journal publications and invited talks. The research staff furthermore has expertise in epitaxy of III/V materials such as InAs, GaAs, GaSb and InP and also in forming advanced heterostructures in nanowires. Experience also encompasses thin film technology and advanced processing, all of which is essential to the development of advanced III/V based tunnel FETs. The experience of tunnel FET devices at IBM is notable through the first ever demonstration of nanowire based tunneling FETs and also by the optimization of those devices to show state-of-the-art all-silicon tunnel FETs with integration of high-k gate dielectrics.
Partner 5 - IBM
About IMCIntel Mobile Communications GmbH (IMC) develops, manufactures, and markets end-to-end, leading-edge semiconductor products and solutions for wireless communications. IMC's goal is to enable the smooth transmission of voice and high-speed data to the end-user's equipment. IMC offers a mature portfolio of RF transceivers, cellular platforms, and connectivity solutions for mobile phones, smartphones, and mobile computing devices. Leveraging its unique advantages in the areas of RF and mixed-signal expertise, monolithic integration capabilities, and excellent knowhow in cellular software and systems, IMC provides superior customer solutions.
Intel Mobile Communications - formerly the Wireless Solutions division of Infineon Technologies AG - was fully acquired by Intel early in 2011. The profitable and fast-growing division reported $2 billion in revenue in the 2010 calendar year, up more than 50 percent from 2009.
Intel Mobile Communications is involved in several funding projects concerning CMOS technology, modeling and circuitry design. Due to newest CMOS technologies highly integrated solutions for wireless communication systems can be provided. Intel Mobile Communications is involved under this project by means of its Technology and Advanced Circuit Departments. By default the results of the project shall be disseminated and exploited in the wireless business division.
Partner 6 - IMC
Intel Mobile Communications GmbH
Reinhard Mahnkopf, Thomas Schulz
About FZJForschungszentrum Jülich (FZJ) pursues cutting-edge interdisciplinary research on solving the grand challenges facing society in the fields of health, energy and the environment, and also information technologies. In combination with its two key competencies – physics and supercomputing – work at Jülich focuses on both long-term, fundamental and multidisciplinary contributions to science and technology as well as on specific technological applications. With a staff of about 4400, Jülich – a member of the Helmholtz Association – is one of the largest research centres in Europe.
IBN performs application-oriented basic research in the domain of information technology. The silicon-related activities concentrate on the investigation of new materials, e.g. strained silicon, Si-Ge, high-k dielectrics and metal gates and nanodevices. Particular emphasis is placed on the development of Schottky barrier-, Tunneling- and fully depleted MOSFETs in planar and nanowire configuration. For material synthesis, atomic layer deposition (ALD) for high-k and metal gate deposition on 200/300 mm wafers, SiGe-LPCVD, MBE (Si, Si-Ge, GaAs, AlGaAs), MOVPE (InP-based materials), and pulsed laser deposition (high-k, ferroelectrics) are used. The institute has a fully-equipped clean room for the fabrication of nanoelectronic devices, including e-beam and optical lithography. The thin films can be characterized with numerous methods, e.g. RBS/channeling, HRTEM, Raman spectroscopy, photoluminescence, AFM and STM. An industrial 250keV ion implanter as well as a 1.7 MeV Tandetron accelerator are available for ion implantation and ion beam analysis. Electrical and optoelectronic characterization methods for devices are also available.
Partner 7 - FZJ
About SCIPROMSCIPROM (http://www.sciprom.ch) is an SME specialised in the management of European research projects. SCIPROM supports scientific coordinators from the first project idea to the final report, in project set-up, submission, negotiation, and management. At present, SCIPROM has 7 employees.
SCIPROM is currently involved in the management of more than ten FP7 and FP6 projects. SCIPROM manages projects in different thematic priorities (ICT, NMP, Health, SSH etc.), and with different types of funding schemes (IPs with 20 - 30 participants, several STREPs, a Marie Curie action, two coordination actions). All SCIPROM project managers have both a substantial scientific background with several years of research activities and sound experience in project management incl. training in IP and financial issues. SCIPROM has extensive in-house knowledge in the creation of project websites incl. custom made collaboration platforms and dissemination material (brochures, flyers).
Partner 8 - SCIPROM
Peter Ulrich, Kirsten Leufgen
About RWTHRWTH Aachen University was founded in 1870 and is today one of Europe’s leading technical universities with more than 31000 students. The Institute of Semiconductor Electronics is associated with the faculty of electrical engineering and information technology, the premier EE department in Germany. The Institute participated successfully in a number of European and national projects. It operates a clean room facility with a full 4” CMOS line for the fabrication of research devices and prototypes.
RWTH contributes with a broad experience of modelling and simulations of nanoelectronics devices in particular of tunnel FETs such as carbon nanotubes and ultrathin-body silicon tunnel FETs. Furthermore, RWTH has a long-lasting experience in the fabrication and processing of silicon nanoscale MOSFETs and ultrathin-body SOI Schottky-barrier MOSFETs. The PI of RWTH participated in the NODE project as well as in the NoE SINANO.
Partner 9 - RWTH