First workshop

The 1st workshop of the STEEPER project entitled "Simulation and Characterization of Steep Slope Switches (SSS)" was held on 9 September at the premises of the SISPAD 2010 Conference, Royal Hotel Carlton, Bologna. The workshop was chaired by Prof. A. Ionescu, EPFL, and Prof. Giorgio Baccarani, University of Bologna.

Workshop Programme

SpeakerTitle (click to download the presentation)
Adrian Ionescu, EPFL Welcome and general information on FP7 STEEPER initiative in Europe
Cyrille Le Royer, CEA Tunnel FETs: impact of the fabrication process on the electrical performances (Keynote)
Qing-Tai Zhao and Siegfried Mantl, Institute of Bio- and Nanosystems, Forschungszentrum Juelich Planar and Nanowire Si-TFETs
Sayeef Salahuddin, University of California at Berkeley Novel concepts for steep slope switches (Keynote)
Nima Dehdashti Akhavan and Jean-Pierre Colinge, Tyndall National Institute Sub-60mv/decade switching in junction-less transistors
Elena Gnani and Giorgio Baccarani, University of Bologna Steep-slope nanowire FETs: from concept to design
Mathieu Luisier, Purdue University Atomistic Simulation of TFETs: from Coherent to Phonon-Assisted Tunneling (Keynote)
Pierpaolo Palestri, Univ. of Udine Simulation challenges in tunnel FETs
David Jiménez, Universitat Autònoma de Barcelona Modeling negative capacitance field effect transistor
H. Riel, IBM Research GmbH, Zurich Research Laboratory Nanowire tunnel FETs in silicon and III-V material systems (Keynote)
Joachim Knoch, TU Dortmund III-V heterojunction tunnel FETs
Livio Lattanzio, EPFL Abrupt Hybrid Switches Using Internally Combined Band-To-Band and Barrier Tunneling Mechanisms
David Esseni, University of Udine Role of the transport in the channel for Ion optimization in Tunnel FETs

Second workshop

The 2nd workshop of the STEEPER project entitled "Steep Slope Switches (SSS) Technologies, Devices, Applications" was held at the ESSDERC/ESSCIRC Conference in Bordeaux on Sept. 21, 2012. The one day workshop covered the state of the art topics and the presentations will be delivered by internationally recognize experts.

Workshop Programme

SpeakerTitle (click to download the presentation)
Adrian Ionescu, EPFL STEEPER FP7 Project Introduction
Eli Yablonovitch, UCB Density-of-States Switching Mechanism for the Tunnel Field Effect Transistor
Cyrille Le Royer, CEA Silicon TFET Processing
Dr. Heike Riel, IBM Zurich Nanoscale IIIV DevicesProcessing
Simon Richter, FZ Juelich Strained Si and SiGe nanowire TFETs
Thomas Grap, RWTH Aachen Electrostatic Doping in Tunnel FETs
Prof. G. Baccarani, Uni. Bologna Modeling and simulation of SSS Devices