STEEPER results in APL

Another paper by STEEPER participants from Research Center Jülich, in collaboration with the University of Leeds, the University of Warwick and CEA-LETI has been published in Applied Physics Letters.

S. Wirths, A. T. Tiedemann, Z. Ikonic, P. Harrison, B. Holländer et al., IBand engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors. Appl. Phys. Lett. 102, 192103 (2013); doi: 10.1063/1.4805034

Results from STEEPER published in IEEE EDL

STEEPER participants from Research Center Jülich and IUNET (Italian University NanoElectronics Team) have published their findings on “Inverters with strained Si nanowire complementary tunnel field-effect transistors” in IEEE Electron Device Letters.

L. Knoll, Q. T. Zhao, Member, IEEE, A. Nichau, S.Trellenkamp, S. Richter, A. Schäfer, D. Esseni, L. Selmi, K. K. Bourdelle, S. Mantl, Member, IEEE. Inverters with strained Si nanowire complementary tunnel field-effect transistors. EEE Electron Device Letters Volume 34, Issue 6, 2013 doi: 10.1109/LED.2013.2258652