S. Wirths, A. T. Tiedemann, Z. Ikonic, P. Harrison, B. Holländer et al., IBand engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors. Appl. Phys. Lett. 102, 192103 (2013); doi: 10.1063/1.4805034
L. Knoll, Q. T. Zhao, Member, IEEE, A. Nichau, S.Trellenkamp, S. Richter, A. Schäfer, D. Esseni, L. Selmi, K. K. Bourdelle, S. Mantl, Member, IEEE. Inverters with strained Si nanowire complementary tunnel field-effect transistors. EEE Electron Device Letters Volume 34, Issue 6, 2013 doi: 10.1109/LED.2013.2258652
A video is available at the following link on our website.
16.6 InAs-Si Heterojunction Nanowire Tunnel Diodes and Tunnel FETs (Invited),
H. Riel, K.E. Moselund, C. Bessire, M.T. Björk, A. Schenk*, H. Ghonein, H. Schmid, IBM Research, Zurich, *ETH, Zurich
We have demonstrated InAs-Si vertical heterojunction NW tunnel diodes with record high currents of 6MA/cm2 at 0.5 V in reverse bias and TFETs with 2.4 μA/μm, Ion/Ioff 10^6 and a slope of 150 mV/dec over 3 decades. The achieved improvements can be attributed to increased NW doping and Ni alloying of the top contact.
Full programme: http://www.his.com/~iedm/program/2012_techprogram.pdf
The STEEPER Consortium will be contributing to the European Nanoelectronics Forum 2012 to be held in Munich on 20-21 November. For the first time, the three most important tools for the European nanoelectronics community - CATRENE, the Eureka cluster programme, the ENIAC Joint Undertaking and the EU's Seventh Framework Programme (FP7) - will work together to host this important event. The STEEPER Consortium will be presenting posters and a computer demonstration of related Steep Slope Switches (SSS) simulation software.