STEEPER results in APL

Another paper by STEEPER participants from Research Center Jülich, in collaboration with the University of Leeds, the University of Warwick and CEA-LETI has been published in Applied Physics Letters.

S. Wirths, A. T. Tiedemann, Z. Ikonic, P. Harrison, B. Holländer et al., IBand engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors. Appl. Phys. Lett. 102, 192103 (2013); doi: 10.1063/1.4805034

Results from STEEPER published in IEEE EDL

STEEPER participants from Research Center Jülich and IUNET (Italian University NanoElectronics Team) have published their findings on “Inverters with strained Si nanowire complementary tunnel field-effect transistors” in IEEE Electron Device Letters.

L. Knoll, Q. T. Zhao, Member, IEEE, A. Nichau, S.Trellenkamp, S. Richter, A. Schäfer, D. Esseni, L. Selmi, K. K. Bourdelle, S. Mantl, Member, IEEE. Inverters with strained Si nanowire complementary tunnel field-effect transistors. EEE Electron Device Letters Volume 34, Issue 6, 2013 doi: 10.1109/LED.2013.2258652

STEEPER on Euronews

The STEEPER project has been featured on the Euronews futuris television programme.

A video is available at the following link on our

STEEPER at the IEEE International Electron Devices Meeting (IEDM)

STEEPER Consortium member IBM has been invited to present at the 2012 IEDM meeting in San Francisco.

16.6 InAs-Si Heterojunction Nanowire Tunnel Diodes and Tunnel FETs (Invited), 
H. Riel, K.E.  Moselund, C. Bessire, M.T. Björk, A. Schenk*, H. Ghonein, H. Schmid, IBM Research, Zurich, *ETH, Zurich
We have demonstrated InAs-Si vertical heterojunction NW tunnel diodes with record high currents of 6MA/cm2 at 0.5 V in reverse bias and TFETs with 2.4 μA/μm, Ion/Ioff  10^6 and a slope of 150 mV/dec over 3 decades. The achieved improvements can be attributed to increased NW doping and Ni alloying of the top contact.

Full programme:

STEEPER at the European Nanoelectronics Forum 2012

The STEEPER Consortium will be contributing to the European Nanoelectronics Forum 2012 to be held in Munich on 20-21 November. For the first time, the three most important tools for the European nanoelectronics community - CATRENE, the Eureka cluster programme, the ENIAC Joint Undertaking and the EU's Seventh Framework Programme (FP7) - will work together to host this important event. The STEEPER Consortium will be presenting posters and a computer demonstration of related Steep Slope Switches (SSS) simulation software.